Nd:YVO4 is one of the most promising commercially available diode pumped solid state laser materials. It has high laser induced damage threshold and good mechanical in addition to optical properties. Its large stimulated emission cross-section and high absorption of pump laser make it a right crystal for pocket laser. Nd: YVO4 can produce IR green and blue laser by using minor different set-up. A broad absorption band centered at 808nm and favorable mechanical properties make Nd:YVO4 well suited for compact, efficient, high power diode-pumped lasers. Natural birefringence gives rise to a highly polarized output at 1064.3 and 1342nm.
| Materials | Nd: YVO4 |
| Concentration Tolerance (atm%) | 0.5%, 1.1%, 2.0%, 3.0% |
| Orientation | A-cut or C-cut |
| Parallelism | 20〞 |
| Perpendicularity | 5〞 |
| Surface Quality | 10/5 Scratch/Dig per MIL-O-13830 B |
| Wavefront Distortion | <λ/8 @633nm |
| Surface Flatness | λ/10@ 633 nm |
| Clear Aperture | >90% |
| Chamfer | ≤0.2mm@450 |
| Dimension Tolerance | (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm) |
| (W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm) | |
| Angle Tolerance | ≤0.5° |
| Damage Threshold[GW/cm2 ] | >1 for 1064nm, TEM00, 10ns, 10Hz (AR-coated) |
| Coatings | HR@1064nm+532nm+HT@808nm/AR@1064nm+532nm |
| Crystal Structure | Zircon Tetragonal, space group D4h-I4/amd |
| Lattice Constants | a=b=7.12, c=6.29 |
| Density | 4.22g/cm3 |
| Melting Point | 1825 |
| Thermal Conductivity /(W·m-1·K-1@25°C) | 5.2 |
| Thermal Optical Coefficient(dn/dT) | dno/dT=8.5×10-6/K; dne/dT=2.9×10-6/K |
| Thermal Expansion /（10-6·K-1@25°C ） | a = 4.43, c= 11.4 |
| Hardness (Mohs) | 4~5 |
| Laser Wavelength | 1064nm, 1342nm |
| Polarized Laser Emission | πpolarization; parallel to optic axis (c-axis) |
| Pump Wavelength | 808nm |
| Intrinsic Loss | 0.02cm-1 @1064nm |
| Diode Pumped Optical to Optical Efficiency | >60% |
| Emission Cross Section | 25×10-19cm2@1064nm |
| Fluorescence Lifetime | 90 μs (about 50 μs for 2 atm% Nd doped) @ 808 nm |
| Gain Bandwidth | 0.96nm @1064nm |
| Refractive Index | 1.9573(no); 2.1652(ne) @1064nm |
| 1.9721(no); 2.1858(ne) @808nm | |
| 2.0210(no); 2.2560(ne) @532nm | |
| Absorption Coefficient | 31.4 cm-1 @ 808 nm |
| Absorption Length | 0.32 mm @ 808 nm |
| Gain Bandwidth | 0.96 nm (257 GHz) @ 1064 nm |
